同步動態隨機存取記憶體

Synchronous DRAM is designed to process data at the same clock speed as the CPU. Therefore, synchronous DRAM is regarded as the core component that is used in high speed processing of large volumes of data. Currently, its usage is expanding to various consumer electronics such as DTV, DSC, HDD and STB.

16Mb SDRAM

Part No.	Organization		Voltage	Speed Grade			Package	Status*	RoHS
W9816G6IB	1Mbit x16	2 Banks	3.3V±0.3V	-6/ -6I	166 MHz	CL3	Packaged in VFBGA 60 balls pitch=0.65mm, using Lead free materials with RoHS compliant	P	Y
W9816G6IB	1Mbit x16	2 Banks	2.7V~3.6V	-7	143 MHz	CL3		P	Y
W9816G6IH	1Mbit x16	2 Banks	3.3V±0.3V	-5	143 MHz	CL2	Package in 50-pin, 400 mil TSOP II, using Lead free materials with RoHS compliant	P	Y
			3.3V±0.3V	-5	200 MHz	CL3
			3.3V±0.3V	-6/-6I/ -6A	166 MHz
			2.7V~3.6V	-7/-7I	143 MHz

* Status: P= Mass Production、S(Time)=Samples(Ready Time)、UD (Time)= Under Development(Ready Time)、NRFND=Not Recommended For New Design、EOL=End of life.

64Mb SDRAM

Part No.	Organization		Voltage	Speed Grade			Package	Status*	RoHS
W9864G2IB	2Mbit x32	4 Banks	3.3V±0.3V	-6	166 MHz	CL3	Packaged in TFBGA 90 ball(8x13mm² ), using Lead free materials with RoHS compliant	P	Y
W9864G2IB	2Mbit x32	4 Banks	2.7V~3.6V	-7	143 MHz	CL3		P	Y
W9864G2IH	2Mbit x32	4 Banks	3.3V±0.3V	-5	200 MHz	CL3	Packaged in TSOP II 86-pin, using Lead free materials with RoHS compliant	P	Y
			3.3V±0.3V	-6/-6I/ -6A	166 MHz
			2.7V~3.6V	-7	143 MHz
W9864G2JH	2Mbit x32	4 Banks	3.3V±0.3V	-5	200 MHz	CL3	Packaged in TSOP II 86-pin, using Lead free materials with RoHS compliant	P	Y
			3.3V±0.3V	-6/-6I/ -6A	166 MHz
			2.7V~3.6V	-7	143 MHz
W9864G6IH	4Mbit x16	4 Banks	3.3V±0.3V	-5	200 MHz	CL3	Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant	NRFND	Y
			3.3V±0.3V	-6/-6I/ -6A	166 MHz
			2.7V~3.6V	-7/-7S	143 MHz
W9864G6JH	4Mbit x16	4 Banks	3.3V±0.3V	-5	200 MHz	CL3	Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant	P	Y
			3.3V±0.3V	-6/-6I/ -6A	166 MHz
			2.7V~3.6V	-7/-7S	143 MHz
W9864G6JB	4Mbit x16	4 Banks	3.3V±0.3V	-6	166 MHz	CL3	Packaged in VFBGA 60 balls, using Lead free materials with RoHS compliant	P	Y
W9864G6JB	4Mbit x16	4 Banks	2.7V~3.6V	-7	143 MHz	CL3		P	Y
W9864G6JT	4Mbit x16	4 Banks	3.3V±0.3V	-6/-6I/ -6A/-6K	166 MHz	CL3	Packaged in TFBGA 54 balls, using Lead free materials with RoHS compliant	P	Y

* Status: P= Mass Production、S(Time)=Samples(Ready Time)、UD (Time)= Under Development(Ready Time)、NRFND=Not Recommended For New Design、EOL=End of life.

128Mb SDRAM

Part No.	Organization		Voltage	Speed Grade			Package	Status*	RoHS
W9812G2IH	4Mbit x32	4 Banks	3.3V±0.3V	-6C	166 MHz	CL3	Packaged in TSOP II 86-pin, using Lead free materials with RoHS compliant	P	Y
			2.7V~3.6V	-6/-6I/ -6A	166 MHz
			2.7V~3.6V	-75	133 MHz
W9812G2IB	4Mbit x32	4 Banks	2.7V~3.6V	-6/-6I/ -6A	166 MHz	CL3	Packaged in TFBGA 90 Ball(8x13mm² ), using Lead free materials with RoHS compliant	P	Y
W9812G2IB	4Mbit x32	4 Banks	2.7V~3.6V	-75	133 MHz	CL3		P	Y
W9812G6IH	8Mbit x16	4 Banks	3.3V±0.3V	-5	200 MHz	CL3	TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant	NRFND	Y
				-6/-6C/-6I/ -6A	166 MHz
				-75	133 MHz
W9812G6JH	8Mbit x16	4 Banks	3.3V±0.3V	-5	200 MHz	CL3	TSOP II 54-pin, 400 mil using Lead free with RoHS compliant	P	Y
				-6/-6I/ -6A	166 MHz
				-75	133 MHz
W9812G6JB	8Mbit x16	4 Banks	2.7V ~ 3.6V	-6	166 MHz	CL3	Packaged in TFBGA 54 Ball(8x8mm² ), using Lead free materials with RoHS compliant	P	Y
W9812G6JB	8Mbit x16	4 Banks	2.7V ~ 3.6V	-75	133 MHz	CL3		P	Y

* Status: P= Mass Production、S(Time)=Samples(Ready Time)、UD (Time)= Under Development(Ready Time)、NRFND=Not Recommended For New Design、EOL=End of life.

256Mb SDRAM

Part No.	Organization		Voltage	Speed Grade			Package	Status*	RoHS
W9825G2JB	8Mbit x32	4 Banks	3.3V±0.3V	-6	166 MHz	CL3	90 Balls TFBGA, using Lead free materials with ROHS compliant	P	Y
			2.7V~3.6V	-6I	166 MHz
			2.7V~3.6V	-75/75I	133 MHz
W9825G6EH	16Mbit x16	4 Banks	3.3V±0.3V	-5	200MHz	CL3	Packaged in TSOP II 54-pin, 400 mil - 0.80, using Lead free materials with RoHS compliant	NRFND	Y
				-6/-6I/-6A	166 MHz	CL3
				-6	133 MHz	CL2
				-75/75I/75A	133 MHz	CL3
W9825G6JH	16Mbit x16	4 Banks	3.3V±0.3V	-5	200MHz	CL3	Packaged in TSOP II 54-pin, 400 mil - 0.80, using Lead free materials with RoHS compliant	P	Y
				-6/-6I/-6L/ -6A	166 MHz	CL3
				-6	133 MHz	CL2
				-75/75L	133 MHz	CL3
W9825G6JB	16Mbit x16	4 Banks	2.7V~3.6V	-6	166MHz	CL3	Packaged in TFBGA 54 Ball(8x8mm²), using Lead free materials with RoHS compliant	P	Y
				-6	133 MHz
				-75	133 MHz

* Status: P= Mass Production、S(Time)=Samples(Ready Time)、UD (Time)= Under Development(Ready Time)、NRFND=Not Recommended For New Design、EOL=End of life.

Contact us: SDRAM@winbond.com