虛擬靜態隨機存取記憶體
Pseudo SRAM (Static Random Access Memory) consists of a DRAM macro core with a traditional SRAM interface; an on-chip refresh circuit frees the user from the need to take care of this task. For product characteristics, PSRAM has advantage in higher density, higher speed, smaller die size, and DRAM compatible process.
| Part No. |
Category |
Density |
I/O |
Vdd / Vddq |
Spec |
Status* |
RoHS |
|
|
PSRAM |
16 Mb |
X16 |
1.8V / 1.8V 3V / 3V |
70ns / - |
P |
- |
|
|
PSRAM |
32 Mb |
X16 |
3V / 3V |
65ns / Page |
P |
- |
|
|
PSRAM |
32 Mb |
X16 |
3V / 3V |
70ns / Page |
P |
- |
|
|
PSRAM |
32 Mb |
X16 |
3V / 3V |
Non-MUX 133MHz / 70ns / Page |
UD (Q3/’08) |
- |
|
|
PSRAM |
64 Mb |
X16 |
3V / 3V |
65ns / Page |
P |
- |
|
|
PSRAM |
64 Mb |
X16 |
1.8V / 1.8V |
70ns / Page |
P |
- |
|
|
PSRAM |
64 Mb |
X16 |
3V / 3V |
70ns / Page |
P |
- |
|
|
PSRAM |
64 Mb |
X16 |
3V / 3V |
Non-MUX 133MHz / 70ns / Page |
UD (Q2/’08) |
- |
|
|
PSRAM |
64 Mb |
X16 |
1.8V / 1.8V |
A/D MUX 133MHz / 70ns / Page |
P |
- |
|
|
PSRAM |
128 Mb |
X16 |
3V / 1.8V |
77MHz / 70ns / Page |
P |
- |
|
|
PSRAM |
128 Mb |
X16 |
1.8V / 1.8V |
133MHz / 70ns / Page |
P |
- |
|
|
PSRAM |
256 Mb |
X16 X32 |
1.8V / 1.8V |
133MHz / 70ns / Page |
P |
- | * Status: P= Mass Production、S=Samples、UD=Under Development、UD (Time)= Under Development(Ready Time)、EOL=End of life
Contact us:
PSRAM@winbond.com
|