Winbond - 虛擬靜態隨機存取記憶體(Pseudo SRAM)
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虛擬靜態隨機存取記憶體(Pseudo SRAM)

Pseudo SRAM (Static Random Access Memory) consists of a DRAM macro core with a traditional SRAM interface; an on-chip refresh circuit that frees the user from the need to take care of this task. Comparing to traditional CMOS SRAM, PSRAM has advantage in higher density, higher speed, smaller die size, and DRAM compatible process.

Part No. Category Density I/O Vdd / Vddq Spec Status* RoHS
PSRAM 16 Mb X16 1.8V / 1.8V
3V / 3V
70ns / - P -
PSRAM 32 Mb X16 3V / 3V 65ns / Page P -
PSRAM 32 Mb X16 3V / 3V 70ns / Page P -
PSRAM 32 Mb X16 3V / 3V

Non-MUX
133MHz / 70ns / Page

UD (Q3/’08) -
PSRAM 64 Mb X16 3V / 3V 65ns / Page P -
PSRAM 64 Mb X16 1.8V / 1.8V 70ns / Page P -
PSRAM 64 Mb X16 3V / 3V 70ns / Page P -
PSRAM 64 Mb X16 3V / 3V Non-MUX 133MHz / 70ns / Page UD (Q2/’08) -
PSRAM 64 Mb X16 1.8V / 1.8V A/D MUX 133MHz / 70ns / Page P -
PSRAM 128 Mb X16 3V / 1.8V 77MHz / 70ns / Page P -
PSRAM 128 Mb X16 1.8V / 1.8V 133MHz / 70ns / Page P -
W968D6B
W958D2B
PSRAM 256 Mb X16
X32
1.8V / 1.8V 133MHz / 70ns / Page P -
* Status: P= Mass Production、S=Samples、UD=Under Development、UD (Time)= Under Development(Ready Time)、EOL=End of life

Contact us:  PSRAM@winbond.com