同步動態隨機存取記憶體
Synchronous DRAM is designed to process data at the same clock speed as the CPU. Therefore, synchronous DRAM is regarded as the core component that is used in high speed processing of large volumes of data. Currently, its usage is expanding to various consumer electronics such as DTV, DSC, HDD and STB.
16Mb SDRAM
| Part No. |
Organization |
Speed Grade |
Voltage |
Package |
Status* |
RoHS |
| W9816G6IH |
1Mx16 |
2 Banks |
-5 |
143 MHz |
CL2 |
3.3V±0.3V |
Package in TSOP II 50-pin, 400 mil using Pb free with RoHS compliant |
P |
Y |
| 200 MHz |
CL3 |
| -6/-6I |
166 MHz |
3.3V±0.3V |
| -7/-7I |
143 MHz |
2.7V~3.6V | * Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.
64Mb SDRAM
| Part No. |
Organization |
Speed Grade |
Voltage |
Package |
Status* |
RoHS |
| W9864G2GH |
2Mx32 |
4 Banks |
-5 |
200 MHz |
CL3 |
3.3V±0.3V |
Packaged in TSOP II 86-pin (400 mil) using Pb free with RoHS compliant |
N |
Y |
| -6/-6I |
166 MHz |
| -7 |
143 MHz |
2.7V~3.6V |
| W9864G6IH |
4Mx16 |
4 Banks |
-5 |
200 MHz |
CL3 |
3.3V±0.3V |
Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant |
P |
Y |
| -6/-6I |
166 MHz |
| -7/-7S |
143 MHz |
2.7V~3.6V | * Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life, N= None for new design.
128Mb SDRAM
| Part No. |
Organization |
Speed Grade |
Voltage |
Package |
Status* |
RoHS |
| W9812G2IH |
4Mx32 |
4 Banks |
-6/-6I |
166 MHz |
CL3 |
3.3V±0.3V |
Packaged in TSOP II 86-pin, using Lead free materials with RoHS compliant |
P |
Y |
| -75 |
133 MHz |
| W9812G2IB |
4Mx32 |
4 Banks |
-6/-6I |
166 MHz |
CL3 |
3.3V±0.3V |
Packaged in TFBGA 90 ball(8x13mm² ), using Lead free materials with RoHS compliant |
P |
Y |
| -75 |
133 MHz |
| W9812G6IH |
8Mx16 |
4 Banks |
-5 |
200 MHz |
CL3 |
3.3V±0.3V |
TSOP II 54-pin, 400 mil using Pb free with RoHS compliant |
P |
Y |
| -6/-6I |
166 MHz |
| -75 |
133 MHz | * Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.
256Mb SDRAM
| Part No. |
Organization |
Speed Grade |
Voltage |
Package |
Status* |
RoHS |
| W9825G2DB |
8Mx32 |
4 Banks |
-6/-6I |
166 MHz |
CL3 |
3.3V±0.3V |
TFBGA 90 ball using Pb free with RoHS compliant |
P |
Y |
| -75/75I |
133 MHz |
| W9825G6EH |
16Mx16 |
4 Banks |
-5 |
200MHz |
CL3 |
3.3V±0.3V |
Packaged in TSOP II 54-pin, 400 mil - 0.80, using Lead free materials with RoHS compliant |
P |
Y |
| -6/-6I |
166 MHz |
| -6 |
133 MHz |
CL2 |
| -75/75I |
CL3 | * Status: P= Mass Production, S=Samples, UD=Under Development, UD (Time)= Under Development(Ready Time), EOL=End of life.
Contact us:
SDRAM@winbond.com
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