首頁

低功耗雙存取同步动态随机存取内存-第三代

High bandwidth and cost advantages
For 1Gb x32 LPDDR3, it’s the alternative solution for developing high B/W (8.52GB/s) around 0.3W. This move will help Winbond further expand its product portfolio to respond to the diverse AIoT and ultra-high-resolution display application needs. This move will help Winbond further expand its product portfolio to respond to the diverse AIoT and ultra-high-resolution display application needs.

expedite time to market: Today’s embedded system developers face challenges to upgrade LPDDR2 memory for new embedded SoC chips. Considering the migration path from LPDDR2 to LPDDR4, the IC design teams will need to invest more resources to deal with more critical signal integrity of LPDDR4 specification under tight timing margins. It is taking a great deal of time to verify and test the new design.

附注: 如果有KGD的需求, 请连络我们

Density

Part No. Voltage Speed Temp. Organization Status Industrial & Commercial
Datasheet
Automotive Industrial & Commercial
W63AH6NBV 1.8V / 1.2V 1600 / 1866 / 2133 Mbps -25℃~85℃, -40℃~85℃ 64Mbit x16 - P pdf
W63AH2NBV 1.8V / 1.2V 1600 / 1866 / 2133 Mbps -25℃~85℃, -40℃~85℃ 32Mbit x32 - P pdf
Status1:P= Mass Production, S (Time)= Samples (Ready Time), UD (Time)= Under Development (Ready Time), N= Not recommended for new designs
Status2:All Winbond products are "Green", Halogen-Free and RoHS compliant packaging. Refer to the datasheet for details and specifications.

Technical Documentation

Resources

Technical Article

>> All Technical Article
联系我们

Copyright © Winbond All Rights Reserved.

本网站使用cookie作为与网站互动时识别浏览器之用,浏览本网站即表示您同意本网站对cookie的使用及相关隐私权政策
OK