1Gb NAND + 512Mb LPDDR1
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产品特点
W29N01GW NAND Flash Memory
Basic Features
Density : 1Gbit (Single chip solution)
Vcc : 1.7V to 1.95V
Bus width : x16
Operating temperature
Industrial: - 40°C to 85°C
Single-Level Cell (SLC) technology.
Organization
Density: 1G-bit/128M-byte
Page size:1,056 words(1024 +32 words)
Block size:64 pages(64K +2K words)
Highest Performance
Read performance (Max.)
Random read: 25us
Sequential read cycle: 35ns
Write Erase performance
Page program time: 300us(typ.)
Block erase time: 2ms(typ.)
Endurance 100K Erase/Program Cycles
10-years data retention
Command set
Standard NAND command set
Additional command support
Sequential Cache Read
Random Cache Read
Cache Program
Copy Back
OTP Data Program, Data Lock by Page and Data Read
Contact Winbond for block Lock feature
Lowest power consumption
Read: 10mA(typ.)
Program/Erase: 10mA(typ.)
CMOS standby: 10uA(typ.)
W949D6KK Low Power DDR SDRAM
Voltage Supply
VDD = 1.7~1.95V
VDDQ = 1.7~1.95V
Data width: x16
Clock rate: 200MHz (-5),166MHz (-6)
Standard Self Refresh Mode
Partial Array Self-Refresh(PASR)
Auto Temperature Compensated Self-Refresh(ATCSR)
Power Down Mode
Deep Power Down Mode (DPD Mode)
Programmable output buffer driver strength
Four internal banks for concurrent operation
Data mask (DM) for write data
Clock Stop capability during idle periods
Auto Pre-charge option for each burst access
Double data rate for data output
Differential clock inputs (CK and #CK)
Bidirectional, data strobe (DQS)
#CAS Latency: 2 and 3
Burst Length: 2, 4, 8 and 16
Burst Type: Sequential or Interleave
64 ms Refresh period
Interface: LVCMOS compatible
Operating Temperature Range
Industrial (-40°C ~ 85°C)
- Package
- 8x9x1.0